Resonant tunneling permeable base transistors with high transconductance |
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Authors: | Lind E. Lindstrom P. Wernersson L.-E. |
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Affiliation: | Dept. of Solid State Phys., Lund Univ., Sweden; |
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Abstract: | A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained. |
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