High-power highly reliable 1.06 /spl mu/m InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers [MOVPE] |
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| Authors: | Yuda M. Temmyo J. Sasaki T. Sugo M. Amano C. |
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| Affiliation: | NTT Photonics Labs., NTT Corp., Atsugi, Japan; |
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| Abstract: | High output power of about 800 mW in a chip and stable operation for over 14 000 h under 225 mW at 50/spl deg/C have been achieved in 1.06 /spl mu/m InGaAs strained-quantum-well laser diodes, which were realised by low-temperature growth of the InGaAs well layers. |
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