Influence of A-site Ba substitution on microwave dielectric properties of (BaxMg1−x)(A0.05Ti0.95)O3 (A=Zr,Sn) ceramics |
| |
Authors: | Ching-Fang Tseng Tzu-Chun WeiShu-Cheng Lu |
| |
Affiliation: | Department of Electronic Engineering, National United University, No. 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan |
| |
Abstract: | The microwave dielectric properties of (BaxMg1−x)(A0.05Ti0.95)TiO3 (A=Zr, Sn) ceramics were investigated with regard to substitution of Ba for Mg of A-site. The microwave dielectric properties were correlated with the Ba content. With an increase in Ba content from 0.01 to 0.1, the dielectric constant and the τf value increased, but the Q×f value decreased. The sintered (BaxMg1−x)(Zr0.05Ti0.95)TiO3 (called BxMZT) ceramics had a permittivity in the range of 19.1−20.6, quality factor from 180,000 to 25,000 GHz, and variation in temperature coefficient of resonant frequency from −35 to −39 ppm/°C with increasing composition x. For sintered (BaxMg1−x)(Sn0.05Ti0.95)TiO3 (called BxMST) ceramics, the dielectric constant increased from 19 to 20.5, Q×f value increased from 120,000 to 37,000 (GHz), and the τf value increased from −50 to −3.3 ppm/°C as the x increased from 0.01 to 0.1. When A=Sn and x=0.1, (Ba0.1Mg0.9)(Sn0.05Ti0.95)TiO3 ceramics exhibited dielectric constant of 20.5, Q×f value of 37,000 (GHz), and a near-zero τf value of −3.3 ppm/°C sintered at 1210 °C for 4 h. |
| |
Keywords: | (BaxMg1&minus x)(Zr0 05Ti0 95)TiO3 ceramics (BaxMg1&minus x)(Sn0 05Ti0 95)TiO3 ceramics Microwave dielectric properties |
本文献已被 ScienceDirect 等数据库收录! |
|