| 硼硅玻璃与单晶硅场致扩散连接形成机理分析 |
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| 引用本文： | 孟庆森,张莉娜,喻萍,薛锦.硼硅玻璃与单晶硅场致扩散连接形成机理分析[J].材料热处理学报,2001,22(4):17-20. |
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| 作者姓名： | 孟庆森 张莉娜 喻萍 薛锦 |
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| 作者单位： | 1. 西安交通大学焊接研究所,陕西西安,710049;太原理工大学材料科学与工程学院,山西太原,030024
2. 西安交通大学焊接研究所,陕西西安,710049 |
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| 摘 要： | 以固体电解质硼硅玻璃与单晶硅为实验材料，研究了玻璃－金属FDB连接过渡区的微观组织特征，分析了连接形成机理及主要工艺参数对连接过程的影响。提出了金属－氧化物过渡层－玻璃接头结构形式及静电场条件下离子扩散扩接合模型。研究认为，金属玻璃的界面接合归因于玻璃中负氧离子的扩散及界面复合氧化物的形成；呈横向柱状组织的复合氧化物对连接强度具有重要意义。
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| 关 键 词： | 场致扩散焊 过渡区 单晶硅 硼硅玻璃 |
| 文章编号： | 1009-6264(2001)04-0017-04 |
Joining Mechanism of Field-assisted Bonding of Electrolyte Glass to Silicon |
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| MENG Qingsen ,ZHANG Lina ,YU Pin ,XUE Jin.Joining Mechanism of Field-assisted Bonding of Electrolyte Glass to Silicon[J].Transactions of Materials and Heat Treatment,2001,22(4):17-20. |
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| Authors: | MENG Qingsen ZHANG Lina YU Pin XUE Jin |
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| Affiliation: | MENG Qingsen 1,2,ZHANG Lina 1,YU Pin 1,XUE Jin 1 |
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| Abstract: | The microstructure and element distribution near interface of electrolyte glass silicon joining was investigated. The influence of technological parameters on joining process was studied. The joining mechanism was found to be the formation of oxide layer due to the migration and diffusion of ions. It was also found that the columnar microstructure in transitional layer is favorable to the strength of joins. |
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| Keywords: | glass silicon field assisted bonding transitional area |
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