Transient 2-dimensional simulation of a submicrometre gate-length m.e.s.f.e.t. |
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| Authors: | Barnes JJ Lomax RJ |
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| Affiliation: | University of Michigan, Electron Physics Laboratory Department of Electrical & Computer Engineering, Ann Arbor, USA; |
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| Abstract: | The large-signal transient step response of a 0.4 ?m-gate-length GaAs m.e.s.f.e.t. has been computed with a full 2-dimensional simulation. The falltime is saturated drift velocity limited. Details of this transient calculation and the use of a higher order O(h4)] finite-element method are described. |
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