Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AIGaAs by high-pressure photoluminescence |
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Authors: | V A Wilkinson A D Prins D J Dunstan L K Howard M T Emeny |
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Affiliation: | (1) Strained-Layer Structures Research Group, University of Surrey Guildford, GU2 5XH Surrey, UK;(2) Royal Signals and Radar Establishment, WR14 3PS Malvern, Worcestershire, UK;(3) Department of Physics, University of Surrey, UK |
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Abstract: | InxGa1-xAs quantum wells grown pseudomorphically in GaAs and AlGaAs with values ofx up to 0.25 have been studied by photoluminescence under high hydrostatic pressure. We concentrate here on the pressure range
where the emissions quench and take on the characteristics of theX-minima. In the InGaAs/GaAs structures, these transitions display an unexpected pressure coefficient, -2.6 meV/kbar, twice
that of theX minima in GaAs. We assign these transitions to theX minima in the wells, and therefore make a direct measurement of the strainedX positions as a function of composition. In the InGaAs/AIGaAs structures the crossovers occur against theX-minima in the barriers and these crossovers yield an accurate value for the band offset ratio for InGaAs/GaAs heterojunctions
which is found to be 60:40 (CB:VB). |
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Keywords: | InGaAs/GaAs band offsets high-pressure photoluminescence |
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