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Flash-lamp annealing of semiconductor materials—Applications and process models
Authors:R.A. McMahon  M.P. Smith  K.A. Seffen  W. Anwand
Affiliation:a Department of Engineering, University of Cambridge, Trumpington Street, CB2 1PZ, UK
b Forschungszentrum Rossendorf, POB 51 01 19, 01314 Dresden, Germany
Abstract:Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.
Keywords:Flash-lamp   Annealing   Modelling   Ion-implantation   Amorphous silicon
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