Influence of co-catalyst on growth of carbon nanotubes using alcohol catalytic CVD method |
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| Authors: | T. I?á k,T. Dani&scaron ,M. Marton |
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| Affiliation: | a Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovi?ova 3, 812 19 Bratislava, Slovakia
b International Laser Center, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovi?ova 3, 812 19 Bratislava, Slovakia |
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| Abstract: | This paper describes the influence of a co-catalyst on growth of carbon nanotubes (CNTs) by alcohol catalytic chemical vapour deposition (ACCVD) method. Silicon wafers covered with thermal oxide or polycrystalline diamond thin film were used as substrates. Ni thin film supported with Al, Cu or Ti was used as a catalyst. The films were deposited by pulsed laser deposition technique. Comparison of the various types of the co-catalyst (Al, Cu, Ti) leads to the conclusion that Cu co-catalyst is suitable for producing very thin single wall carbon nanotubes (SWCNTs) and combination of Al and Ni provide a good condition to the catalytic growth of CNTs. In addition, we observed also the influence of the various diffusion barriers (thermal oxide and polycrystalline diamond) on growth of CNTs. Prepared samples were analysed by Raman spectroscopy (RS) and scanning electron microscopy (SEM). |
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| Keywords: | Carbon nanotubes ACCVD Catalyst growth SEM Raman spectroscopy |
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