Effects of deposition parameters on SiCln (n=0-2) densities in SiCl4 glow discharge plasma

The relative densities of SiCl_n (n=0-2) in SiCl₄ radio frequency (rf) glow discharge plasma are measured by mass spectrometry. The effects of discharge parameters, including rf power, discharge pressure, substrate temperature and SiCl₄ flow rate on the relative densities of SiCl_n (n=0-2) are investigated in detail. The experimental results demonstrate that the relative densities of SiCl_n (n=0-2) in SiCl₄ plasma are dependent strongly on these discharge parameters. An optimum configuration of discharge parameters (low rf power, high discharge pressure, low substrate temperature and low flow rate), which enhanced the formation of SiCl_n (n=0-2) radicals, was searched. Further, researching of SiCl_n (n=0-2) spatial distribution for seeking a suitable deposition condition is beneficial for understanding the deposition mechanism of thin films.