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Structure changes in InP and GaAs crystals double irradiated with electrons and swift heavy ions |
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| Authors: | A. Didyk L. Vlasukova Yu. Bogatyrev E. Gracheva |
| Affiliation: | a Laboratory of Nuclear Reactions, JINR, 141980 Dubna, Russia b Physical Electronics Faculty, Belarusian State University, F. Skorina Avenue 4, 220050 Minsk, Belarus c Solid and Semiconductor Physics Institute of National Academy of Sciences of Belarus, P. Brovki Street 17, 220072 Minsk, Belarus d New Materials Chemistry Institute of National Academy of Sciences of Belarus, Staroborisovskii Road 36, 220141 Minsk, Belarus |
| Abstract: | We have studied InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions irradiation by means of scanning electron microscopy, atomic force microscopy (AFM) and selective chemical etching. The previous disordering of samples by electron irradiation is shown to be leading to macrodefect formation in the form of cracks and breaks at the depths near the ion end-of-range and on the crystal surface. A possible explanation of the observed effects is proposed. |
| Keywords: | InP and GaAs crystals Preliminary disorder Swift ion irradiation Surface topography Macrodefect formation |
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