Ion implantation effect on atomic structure of deformed Si, Ir, W, Ni and Cu |
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Authors: | Rostyslav Shalayev Vladimir Ivchenko |
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Affiliation: | a Physics and Technology Institute of NASc of Ukraine, St. R. Luxemburg 72, 83114 Donetsk, Ukraine b Institute of Electrophysics of Ural Branch of RAS, St. Amundsen 106, 620016 Ekaterinburg, Russia c Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland |
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Abstract: | It has been revealed, that in Ir subjected to severe plastic deformation, an ultrafine grained structure (UFG) is formed (the grain size of 20-30 nm). Practically no defects have been detected within the grains, while, in the case of Ar+ implantation, the subgrain structure with characteristic sizes of about 3-5 nm is formed; defects have been detected within subgrains.The subgrain structure was also revealed in UFG Ni and Cu after severe plastic deformation (SPD) (subgrain size of 3-15 nm), but in the latter case the observed boundary region is broader and subgrain is highly disoriented. |
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Keywords: | Severe plastic deformation Field ion microscopy Ultrafine grained structure |
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