Study on the performance of sub 100 nm LACLATI MOSFETs for digital application |
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Authors: | Partha Sarkar Abhijit Mallik |
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Affiliation: | a Department of Electronics and Communication Engineering, Gandhi Institute of Technology and Management, Bhubaneswar 752 054, Odisha, India b Department of Electronic Science, University of Calcutta, Kolkata 700 009, West Bengal, India c Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata 700 032, India |
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Abstract: | With the help of extensive simulations, we systematically investigated the effects of varying tilt angle of halo implant in sub 100 nm lateral asymmetric channel (LAC) MOSFETs on the reverse short channel effects, the on current and the hot carrier immunity. The devices with large angle tilt implants also show the substantial reduction in the subthreshold swing, improvement in ION/IOFF ratio and significantly the lower junction capacitance as compared to the devices with low angle tilt implant. It is also observed that the subthreshold characteristics do not change as the channel length decreases for such devices. These devices, known as lateral asymmetric channel with large angle tilt implant (LACLATI), will therefore have much improved performance in comparison to a low angle tilt implant LAC devices for digital applications. |
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