Thermal behavior Spice study of 6H-SiC NMOS transistors

Silicon carbide is a material that is undergoing major advances associated with a broad scope in the field of electronics. The main properties of silicon carbide such as its high thermal conductivity and high band gap make it a material suitable for use in high-temperature and high-power applications. In this Spice study, the thermal behavior of 6H-SiC NMOS transistors is analyzed through their conductance and transconductance changes with temperature in the range −200 to 700 °C. The performances in two basic applications, current mirrors and differential amplifiers, are compared to similar circuits with silicon transistors. The results show that the 6H-SiC NMOS transistors can be used up to 700 °C, while those based on silicon transistors are limited to around 160 °C.