| HPLEC-SI-GaAs单晶炉三温区设计 |
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| 引用本文： | 宋群厚,毛裕国.HPLEC-SI-GaAs单晶炉三温区设计[J].微纳电子技术,2000(2). |
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| 作者姓名： | 宋群厚 毛裕国 |
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| 作者单位： | 电子五十五所!南京210016 |
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| 摘 要： | 简要介绍了三温区设计中应该注意的几点事项和关键技术 ,并对该三温区的使用情况作了简单介绍。
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| 关 键 词： | SI-GaAs 三温区 晶体生长 |
Design of the Three-Zone-Temperature for HPLEC SI GaAs Single Crystal Growth |
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| Song Qunhou,Mao Yuguo.Design of the Three-Zone-Temperature for HPLEC SI GaAs Single Crystal Growth[J].Micronanoelectronic Technology,2000(2). |
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| Authors: | Song Qunhou Mao Yuguo |
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| Abstract: | This paper introduces the design of the three zone temperature for HPLEC SI GaAs single crystal growth.The key techniques and some subjects are discussed mainly.The application and overview of the three zone temperature is offered briefly. |
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| Keywords: | SI-GaAs Three -zone-temperature Single crystal growth |
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