| 新型具有低比导通电阻的多超结功率器件结构 |
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| 引用本文： | 朱辉,李海鸥,李琦,黄远豪,徐晓宁,赵海亮.新型具有低比导通电阻的多超结功率器件结构[J].半导体学报,2014,35(10):104006-5. |
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| 作者姓名： | 朱辉 李海鸥 李琦 黄远豪 徐晓宁 赵海亮 |
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| 摘 要： | 提出一种新型多超结LDMOS功率器件，通过在横向和和纵向P柱区与N柱区之间的相互作用降低器件的导通电阻。在这一结构中，多层超结通过相互反向排列而形成，相比于常规超结的二维耗尽，MSJ由于纵向电场调制的作用形成三维耗尽，并且由于深漏的存在，电流分布更好，在各项条件的作用下，漂移区的掺杂浓度得到了提高，降低了器件导通电阻。底层超结的电场屏蔽效应使得该器件达到电荷平衡，由于衬底辅助耗尽效应效应产生的漏区高电场降低了，在漂移区产生一个均匀分布的电场并且获得高击穿电压。通过数值模拟仿真验证表明：在维持高击穿电压的情况下，长12微米的MSJ功率器件的导通电阻相比于同样大小的常规器件降低了42%。
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| 关 键 词： | 多超结 3维耗尽 击穿电压 导通电阻 电场屏蔽效应 |
A novel multiple super junction power device structure with low specific on-resistance |
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| Zhu Hui,Li Haiou,Li Qi,Huang Yuanhao,Xu Xiaoning and Zhao Hailiang.A novel multiple super junction power device structure with low specific on-resistance[J].Chinese Journal of Semiconductors,2014,35(10):104006-5. |
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| Authors: | Zhu Hui Li Haiou Li Qi Huang Yuanhao Xu Xiaoning and Zhao Hailiang |
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| Affiliation: | Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China;Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China;Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China;Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China;Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China |
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| Abstract: | |
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| Keywords: | multiple super junction 3D-depleted breakdown voltage specific on-resistance electric field shielding effect |
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