Towards the global modeling of InGaAs-based pseudomorphic HEMTs |
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| Authors: | J S Ayubi-Moak R Akis D K Ferry S M Goodnick N Faralli M Saraniti |
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| Affiliation: | (1) Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287, USA |
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| Abstract: | We utilize a 3D full-band Cellular Monte Car- lo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility
transistors (p-HEMTs). We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm. Preliminary
passive results using 3D full-wave Maxwell solver are also presented to illustrate the usefulness of and insight that a future
coupled full-band/full-wave simulator will provide in more accurately, modeling the high frequency performance of p-HEMTs. |
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| Keywords: | Millimeter-wave transistors Monte Carlo methods Pseudomorphic high-electron mobility transistors (p-HEMTs) |
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