Room-temperature ultrasonic annealing of radiation defects in silicon |
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| Authors: | A. A. Podolyan V. I. Khivrich |
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| Affiliation: | (1) Kiev National University, Kiev, Ukraine;(2) Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kiev, Ukraine |
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| Abstract: | Room-temperature ultrasonic annealing of point radiation defects in the bulk of silicon is demonstrated for the first time. The radiation defects in single crystal silicon were generated by the exposure to γ radiation from a 60Co source. A qualitative model of processes in the system of radiation defects under the action of ultrasound is proposed. |
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