Monolithically integrated optical gate 2 × 2 matrix switch using GaAs/AlGaAs multiple quantum well structure |
| |
Authors: | Ajisawa A. Fujiwara M. Shimizu J. Sugimoto M. Uchida M. Ohta Y. |
| |
Affiliation: | NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan; |
| |
Abstract: | A 2 × 2 optical matrix switch, monolithically integrating multiple-quantum-well-gate and optical circuits fabricated by the reactive-ion-beam etching method, is described. The switch size is small, 3 mm × 1.2 mm. Low crosstalk of 20 dB at 12 V is achieved. |
| |
Keywords: | |
|
|