| 电化学沉积生长GaAs薄膜的工艺研究 |
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| 引用本文： | 苏红兵,陈庭金,施兆顺.电化学沉积生长GaAs薄膜的工艺研究[J].电子元件与材料,2003,22(4):28-29. |
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| 作者姓名： | 苏红兵 陈庭金 施兆顺 |
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| 作者单位： | 1. 云南农业大学水利水电与建筑学院,云南,昆明,650201
2. 云南师范大学太阳能所,云南,昆明,650092 |
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| 基金项目： | 云南省应用基础研究基金资助项目(98E00EM) |
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| 摘 要： | 研究了电化学沉积参数对电沉积GaAs薄膜中元素组分以及薄膜质量的影响,得出电化学沉积GaAs薄膜成分接近Ga1As1的最佳工艺条件:pH=1.2;浓度比c(Ga) / c(As)=14;电流密度J=0.006~0.008 A/cm2;阴极材料用SnO2导电玻璃,其SnO2厚度>1mm。并给出改善GaAs薄膜质量的途径,为生产高效、低成本的GaAs太阳能电池奠定基础。
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| 关 键 词： | 电化学沉积 GaAs薄膜 沉积参数 太阳能电池 |
| 文章编号： | 1001-2028(2003)04-0028-02 |
Technology of Electrochemical Deposition for Preparing GaAs Film |
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| SU Hong-bing,CHEN Ting-jin,SHI Zhao-shun.Technology of Electrochemical Deposition for Preparing GaAs Film[J].Electronic Components & Materials,2003,22(4):28-29. |
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| Authors: | SU Hong-bing CHEN Ting-jin SHI Zhao-shun |
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| Affiliation: | SU Hong-bing1,CHEN Ting-jin2,SHI Zhao-shun2 |
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| Abstract: | The effect of electrochemical deposition parameters on composition and quality of GaAs film was investigated. The optimum technology conditions for GaAs close to Ga1As1 and the approaches to improve the film quality have obtained. The conditions are pH=1.2, c(Ga) / c(As)=14, J=0.006~0.008 A/cm2, with SnO2 conductive glass as cathode material. This makes it possible to prepare GaAs film for solar cells in higher efficiency and lower cost. |
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| Keywords: | electrochemical deposition GaAs film deposition parameters solar cell |
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