| 退火温度对硅基溅射银膜微结构和应力的影响 |
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| 引用本文： | 吴桂芳,宋学萍,杨成浩,江兵,孙兆奇. 退火温度对硅基溅射银膜微结构和应力的影响[J]. 功能材料, 2003, 34(6): 682-684 |
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| 作者姓名： | 吴桂芳 宋学萍 杨成浩 江兵 孙兆奇 |
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| 作者单位： | 安徽大学,物理系,安徽,合肥,230039 |
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| 基金项目： | 国家自然科学基金资助项目(59972001)，安徽省自然科学基金资助项目(01044901) |
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| 摘 要： | 用直流溅射法在硅(111)基底上制备银膜，膜厚为380nm。用BGS6341型电子薄膜应力分布测试仪对膜应力随退火温度的变化进行了研究，结果表明：膜应力随着退火温度的升高而增大，在400℃退火温度下膜应力变化明显。用MXP18AHF型X射线衍射仪测量了膜的衍射谱，对膜微结构随退火温度的变化进行了讨论。制备的Ag膜仍为面心立方结构，呈多晶状态，平均晶粒尺寸为23．63nm，薄膜晶格常数(0．40805nm)比标准样品晶格常数(0．40862nm)稍小。
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| 关 键 词： | 溅射镀膜 退火温度 薄膜应力 微结构 直流溅射法 |
| 文章编号： | 1001-9731(2003)06-0682-03 |
| 修稿时间： | 2002-12-09 |
Effect of annealing temperature on the stress properties of sputtering Ag films on Si wafers |
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| WU Gui-fang,SONG Xue-ping,YANG Cheng-hao,JIANG Bin,SUN Zhao-qi. Effect of annealing temperature on the stress properties of sputtering Ag films on Si wafers[J]. Journal of Functional Materials, 2003, 34(6): 682-684 |
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| Authors: | WU Gui-fang SONG Xue-ping YANG Cheng-hao JIANG Bin SUN Zhao-qi |
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| Abstract: | This paper investigate the effect of annealing temperature on the microstructure and stress properties of Ag films on Si wafer. The result shows that the stress increases with increasing annealing temperature. The result also shows that the polycrystalline Ag films were consisted of fcc Ag nanoparticles with an average size of 28.05nm. The lattice constant of the Ag nanoparticle (0.40205nm) was slightly smaller than that of Ag powder (0.40862nm). |
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| Keywords: | sputtering Ag film annealing temperature film stress microstructure |
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