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Comparison of high-efficiency GaAs IMPATT designs |
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| Authors: | Kuv?s R.L. |
| Affiliation: | Rockwell International, Science Center, Thousand Oaks, USA; |
| Abstract: | Calculations of maximum generated r.f. powers are presented for GaAs single-drift Read, double-drift Read and hybrid Read structures at 10 GHz. The single-drift Read diode gives the highest output power in c.w. applications, and the double-drift design is superior in pulsed operation. |
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