Lattice location and electrical conductivity in ion implanted TiO2 single crystals |
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Authors: | R Fromknecht R Auer I Khubeis O Meyer |
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Affiliation: | Forschungszentrum Karlsruhe, Institut für Nukleare Festkörperphysik, P.O.B. 3640, D-76021, Karlsruhe, Germany |
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Abstract: | Single crystals of TiO2 (rutile) were implanted at room temperature with Ar, Sn and W ions applying fluences of 1015/cm2 to 1016/cm2 at 300 keV. The lattice location, together with ion range and damage distribution was measured with Rutherford Backscattering and Channeling (RBS-C). The conductivity, σ, was measured as a function of temperature. The implanted Sn and W atoms were entirely substitutional on Ti sites in the applied fluence region, where the radiation damage did not yet reach the random level. A large σ increase was observed for all implants at displacement per atom values (dpa) below 1. Above dpa = 1, σ reveals a saturation value of 0.3 Ω−1 cm−1 for Ar implants, while for W and Sn implants a further increase of σ up to 30 Ω−1 cm−1 was measured. Between 70 K and 293 K ln σ was proportional to T−1/2, (Ar,W) and T−1/4 (Sn), indicating that the transport mechanism is due to variable range hopping. |
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