| 纳秒级强激光对多晶硅片光吸收性能的影响 |
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| 引用本文： | 许德富,尹少全,邓迟,肖志刚,肖啸,李育德.纳秒级强激光对多晶硅片光吸收性能的影响[J].激光与红外,2011,41(9):979-982. |
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| 作者姓名： | 许德富 尹少全 邓迟 肖志刚 肖啸 李育德 |
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| 作者单位： | 1. 乐山师范学院硅材料研究所,四川乐山,614004
2. 四川大学电子信息学院,四川成都,610064 |
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| 基金项目： | 乐山师范学院科研课题及四川省教育厅科研基金课题（No.10ZC108）资助 |
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| 摘 要： | 采用兆瓦级TEA CO2激光器输出的纳秒级强红外激光脉冲照射太阳能多晶硅片，用红外光谱仪测试了硅片的吸收谱，发现经激光脉冲照射后的太阳能多晶硅片对光的吸收能力大为增强，并对实验结果做出了初步的分析。
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| 关 键 词： | 红外激光脉冲 太阳能多晶硅片 吸收性能 实验研究 |
Impact of ns high power laser on the absorbency of polycrystalline silicon wafer used for solar cell |
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| XU De-fu,YIN Shao-quan,DENG Chi,XIAO Zhi-gang,XIAO Xiao,LI Yu-de.Impact of ns high power laser on the absorbency of polycrystalline silicon wafer used for solar cell[J].Laser & Infrared,2011,41(9):979-982. |
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| Authors: | XU De-fu YIN Shao-quan DENG Chi XIAO Zhi-gang XIAO Xiao LI Yu-de |
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| Affiliation: | Institute of Silicon Material,Leshan Normal University,Sichuan 614004,China;School of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China |
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| Abstract: | In this paper,polycrystalline silicon wafers for soalr cell are irradiated by high power infrared laser pulse which is produced by TEA CO2 laser.The pulse duration is shorter than a microsecond,so it is named ns laser pulse.Then we use infrared spectrograph to get the absorption spectrum of the silicon wafers irradiated by ns infrared laser pulse and find that its absorbency is greatly increased.The experimental results are explained with theory at last. |
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| Keywords: | infrared laser pulse solar cell polycrystalline silicon wafer absorbency |
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