Beryllium diffusion and influence on the luminescent and electrical properties of indium phosphide |
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| Authors: | V V Agaev I N Arsent’ev S G Metreveli S P Starosel’tseva G I Yablochkina |
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| Affiliation: | (1) North-Caucasian Mining and Metallurgy Institute, State Technical University, Vladikavkaz, North Ossetia, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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| Abstract: | The diffusion of beryllium in indium phosphide (InP) has been studied. The temperature dependence of the diffusion coefficient can be described by the formula D = 6.3 × 10?5exp(?1.4/kT) cm2/s], which yields D = 1.07 × 10?11 cm2/s at T = 768°C. The results of measurements of the luminescence and electrical properties show that beryllium is a shallow acceptor with an activation energy of 0.03 ± 0.005 meV. |
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