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MBE growth of high quality GaN on LiGaO2 |
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| Authors: | W. A. Doolittle S. Kang T. J. Kropewnicki S. Stock P. A. Kohl A. S. Brown |
| Affiliation: | (1) School of Electrical and Computer Engineering, Georgia Institute of Technology, 30332-0250 Atlanta, GA;(2) School of Chemical Engineering, Georgia Institute of Technology, 30332-0250 Atlanta, Ga;(3) School of Materials Engineering, Georgia Institute of Technology, 3033-0250 Atlanta, GA |
| Abstract: | |
| Keywords: | GaN LiGaO2 molecular beam epitaxy (MBE) |
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