Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices |
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| Authors: | Paasschens J.C.J. Scholten A.J. van Langevelde R. |
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| Affiliation: | Philips Res. Labs., Eindhoven, Netherlands; |
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| Abstract: | The Klaassen-Prins equation is the standard equation for calculating the drain thermal noise of long-channel MOSFETs. We show that the Klaassen-Prins equation is not always valid, even for MOSFETs. We present generalizations to the Klaassen-Prins equation that include velocity saturation effects of short-channel MOSFETs and that comprise also induced gate noise. |
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