Carrier dynamics and intervalley scattering in InN |
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| Authors: | D.-J. Jang G.-T. Lin M.-E. Lee C.-L. Wu C.-L. Hsiao L.-W. Tu |
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| Affiliation: | aDepartment of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, ROC;bDepartment of Physics, National Kaoshiung Normal University, Kaohsiung 80264, Taiwan, ROC |
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| Abstract: | The carrier cooling and the carrier relaxation of an InN thin film illuminated with two excitation energies of 1.53 and 3.06 eV were studied by an ultrafast time-resolved photoluminescence upconversion apparatus. The hot phonon effect could be accounted for longer effective phonon emission times as compared to the theoretical prediction. The rise time and the LO phonon emission time for 3.06 eV excitation were much smaller than those for 1.53 eV excitation. These differences were attributed to the intervalley scattering between the Γ1 and Γ3 valleys in InN when carriers were excited with the energy of 3.06 eV. The intervalley scattering times of 250 fs and 2 ps were estimated for the intervalley scattering from the Γ1 to Γ3 valley and the reversed scattering process, respectively. |
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| Keywords: | Intervalley scattering InN Time-resolved photoluminescence Carrier relaxation Hot carrier Electron– phonon interaction |
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