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Influence of oxygen partial pressure on the wetting of SiC by a Co–Si alloy |
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| Authors: | O. Mailliart F. Hodaj V. Chaumat N. Eustathopoulos |
| Affiliation: | aCEA – Grenoble, 17 rue des Martyrs, F-38054 Grenoble Cedex, France;bSIMAP – UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75-1130, rue de la Piscine, 38402 Saint Martin d’Hères Cedex, France |
| Abstract: | In this investigation the influence of oxygen partial pressure PO2 on the wetting of SiC by a Co–Si alloy was studied. Wetting experiments were carried out in argon with different oxygen contents (from 5 to 1000 ppm). The relationship between wetting and deoxidation of surfaces (SiC and Co–Si alloy) was investigated. Calculations were performed to evaluate the temperature range over which deoxidation is possible. These calculations are in agreement with the experimental results. |
| Keywords: | Wetting Silicides Silicon carbide Oxidation Interfaces |
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