Phase‐Engineered PtSe2‐Layered Films by a Plasma‐Assisted Selenization Process toward All PtSe2‐Based Field Effect Transistor to Highly Sensitive,Flexible, and Wide‐Spectrum Photoresponse Photodetectors |
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Authors: | Teng‐Yu Su Henry Medina Yu‐Ze Chen Sheng‐Wen Wang Shao‐Shin Lee Yu‐Chuan Shih Chia‐Wei Chen Hao‐Chung Kuo Feng‐Chuan Chuang Yu‐Lun Chueh |
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Affiliation: | 1. Department of Material Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan;2. Institute of Materials Research and Engineering (IMRE), A*STAR, Singapore, Singapore;3. Department of Photonics & Institute of Electro‐Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan;4. Department of Physics, National Sun Yat‐Sen University, Kaohsiung, Taiwan |
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Abstract: | The formation of PtSe2‐layered films is reported in a large area by the direct plasma‐assisted selenization of Pt films at a low temperature, where temperatures, as low as 100 °C at the applied plasma power of 400 W can be achieved. As the thickness of the Pt film exceeds 5 nm, the PtSe2‐layered film (five monolayers) exhibits a metallic behavior. A clear p‐type semiconducting behavior of the PtSe2‐layered film (≈trilayers) is observed with the average field effective mobility of 0.7 cm2 V?1 s?1 from back‐gated transistor measurements as the thickness of the Pt film reaches below 2.5 nm. A full PtSe2 field effect transistor is demonstrated where the thinner PtSe2, exhibiting a semiconducting behavior, is used as the channel material, and the thicker PtSe2, exhibiting a metallic behavior, is used as an electrode, yielding an ohmic contact. Furthermore, photodetectors using a few PtSe2‐layered films as an adsorption layer synthesized at the low temperature on a flexible substrate exhibit a wide range of absorption and photoresponse with the highest photocurrent of 9 µA under the laser wavelength of 408 nm. In addition, the device can maintain a high photoresponse under a large bending stress and 1000 bending cycles. |
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Keywords: | field effect transistors low‐temperature synthesis metallic to semiconducting plasma‐assisted platinum diselenide transition metal dichalcogenide |
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