Type‐I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects |
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| Authors: | Congxin Xia Wenqi Xiong Juan Du Tianxing Wang Yuting Peng Zhongming Wei Jingbo Li Yu Jia |
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| Affiliation: | 1. College of Physics and Materials Science, Henan Normal University, Xinxiang, China;2. Department of Physics, University of Texas at Arlington, TX, USA;3. Institutes of Semiconductors, Chinese Academy of Sciences, Beijing, China;4. Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, China |
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| Abstract: | Transition metal dichalcogenide (TMD) heterostructures have been widely explored due to the formation of type‐II band alignment and interlayer exciton. However, the studies of type‐I TMD heterostructures are still lacking, which limit their applications in luminescence devices. Here, the 1L/nL MX2 (n = 2, 3, 4; M = Mo, W; X = S, Se) lateral homojunction based on the layer‐dependent band gaps of TMD nanosheets is theoretically simulated. The studies show that the TMD homojunction presents with high thermal stability and type‐I band alignment. The band offset and quantum confinement of carriers can be easily tuned by controlling the thickness of the multilayer region. Moreover, the electric field can decrease the band gaps of 1L/3L and 1L/4L homojunctions linearly. Interestingly, for the 1L/2L MX2 homojunction, the gap value is robust to the weak electric field, while it drops sharply under a strong electric field. This study sheds light on the physical pictures in the TMD lateral homojunction, and provides a practicable and general approach to engineer a type‐I homojunction based 2D semiconductor materials. |
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| Keywords: | external electric fields luminescence devices transition metal dichalcogenides type‐I homojunction |
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