Electronic Structure Control of Tungsten Oxide Activated by Ni for Ultrahigh‐Performance Supercapacitors |
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| Authors: | Tian Meng Zongkui Kou Ibrahim Saana Amiinu Xufeng Hong Qingwei Li Yongfu Tang Yufeng Zhao Shaojun Liu Liqiang Mai Shichun Mu |
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| Affiliation: | 1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, China;2. WUT‐Harvard Nano Key Laboratory, Wuhan University of Technology, Wuhan, China;3. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, China;4. Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao, China |
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| Abstract: | Tuning the electron structure is of vital importance for designing high active electrode materials. Here, for boosting the capacitive performance of tungsten oxide, an atomic scale engineering approach to optimize the electronic structure of tungsten oxide by Ni doping is reported. Density functional theory calculations disclose that through Ni doping, the density of state at Fermi level for tungsten oxide can be enhanced, thus promoting its electron transfer. When used as electrode of supercapacitors, the obtained Ni‐doped tungsten oxide with 4.21 at% Ni exhibits an ultrahigh mass‐specific capacitance of 557 F g?1 at the current density of 1 A g?1 and preferable durability in a long‐term cycle test. To the best of knowledge, this is the highest supercapacitor performance reported so far in tungsten oxide and its composites. The present strategy demonstrates the validity of the electronic structure control in tungsten oxide via introducing Ni atoms for pseudocapacitors, which can be extended to other related fields as well. |
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| Keywords: | density functional theory electronic structure Ni doping supercapacitors tungsten oxide |
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