Batch fabrication and structure of integrated GaAs-AlxGa1-xAs field-effect transistor-self-electro-optic effectdevices (FET-SEED's) |
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| Authors: | D'Asaro LA Chirovsky LMF Laskowski EJ Pei S-S Leibenguth RE Woodward TK Focht M Lentine AL Asom MT Guth G Kopf RF Kuo JM Pearton SJ Przybylek GJ Ren F Smith LE |
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| Affiliation: | AT&T Bell Lab., Murray Hill, NJ; |
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| Abstract: | The authors have demonstrated a smart pixel prototype field-effect-transistor-self-electrooptic-effect-device (FET-SEED) integrated optoelectronic amplifier utilizing process technology suitable for flexible design and fabrication of high-yield optoelectronic circuits. A single MBE growth sequence provides for quantum-well modulators, photodiodes, doped channel MIS-like field-effect transistors (DMTs), and resistors. The device dimensions are controlled in a planar technology using ion implantation and selective plasma etching for isolation and contacting. Results demonstrate optical amplification in a fully integrated circuit. This technology will enable increased functionality by providing digital electronic processing between optical input and output |
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