Characterization of nanocrystalline cadmium telluride thin films grown by successive ionic layer adsorption and reaction (SILAR) method |
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Authors: | A U Ubale R J Dhokne P S Chikhlikar V S Sangawar D K Kulkarni |
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Affiliation: | (1) Department of Physics, Govt. Vidarbha Institute of Science and Humanities, 444 604 Amravati, India;(2) Department of Physics, Institute of Science, 440 001 Nagpur, India |
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Abstract: | Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive
ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as
cationic and sodium tellurite as anionic precursor in aqueous medium. In this process hydrazine hydrate is used as reducing
agent and NH4OH as the catalytic for the decomposition of hydrazine. By conducting several trials optimization of the adsorption, reaction
and rinsing time duration for CdTe thin film deposition was done. In this paper the structural, optical and electrical properties
of CdTe film are reported. The XRD pattern shows that films are nanocrystalline in nature. The resistivity is found to be
of the order of 411 × 103 Ω-cm at 523 K temperature with an activation energy of ∼ 0.2 eV. The optical absorption studies show that films have direct
band gap (1.41 eV). |
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Keywords: | Thin film CdTe SILAR method |
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