Experimental and Monte Carlo analysis of impact-ionization inAlGaAs/GaAs HBT's |
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| Authors: | Canali C Pavan P Carlo AD Lugli P Malik R Manfredi M Neviani A Loris Vendrame Zanoni E Zandler G |
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| Affiliation: | Dipartimento di Sci., Modena Univ.; |
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| Abstract: | We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) operating at low current densities. Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission. A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experiment |
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