Influence of Cu additions on the morphology of GeSi precipitates in an Al-Ge-Si alloy

Combined additions of Ge and Si to Al are known to produce higher precipitation hardening than that which occurs in the constituent binaries, when the total amounts of alloying atoms are the same for all the alloys investigated. In the resultant Al-Ge-Si alloys, the diamond cubic precipitates contain both Ge and Si and are designated as GeSi. During artificial aging at 160 °C, the GeSi precipitates are commonly present in three forms, i.e., equiaxed, 〈100〉_Al lath, and triangular plate. The equiaxed form is the dominant one of the three. This article examines the influence of varying amounts (i.e., 2 to 4 wt pct) of Cu additions on the morphology of GeSi precipitates formed in an Al-2.6 wt pct Ge-1.04 wt pct Si alloy during artificial aging at 160 °C. It is shown that Cu additions have the remarkable effect of maximizing the nucleation frequency of the 〈100〉_Al lath form and simultaneously suppressing the nucleation of the equiaxed and the plate forms of the GeSi precipitates. Increasing Cu additions also increase the homogeneity and cause refinement of the 〈100〉_Al laths. These results are discussed in light of (1) the critical requirement of vacancies for the nucleation and growth of GeSi precipitates having an atomic volume larger than Al and (2) the crystallographic nature of the negative dilation strains that develop locally in the Cu-rich regions of the Al matrix. It is further shown that, in the alloys containing increased levels (i.e., exceeding about 2.5 wt pct) of Cu, the precipitation of ϑ′ (metastable ϑ-Al₂Cu) phase occurs, and that the nucleation of Cu-rich ϑ′ precipitates occurs upon the 〈100〉_Al laths of GeSi. The latter effect is discussed in terms of the attainment of both the nucleation site and the necessary solute supersaturation at the 〈100〉_Al GeSi/α-Al interfaces.