| 基于CFBR-Ⅱ堆中子辐射场的硅整流二极管辐照效应试验研究 |
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| 引用本文： | 邱东,邹德慧. 基于CFBR-Ⅱ堆中子辐射场的硅整流二极管辐照效应试验研究[J]. 核动力工程, 2010, 31(1) |
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| 作者姓名： | 邱东 邹德慧 |
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| 作者单位： | 中国工程物理研究院,四川绵阳,621900;中国工程物理研究院,四川绵阳,621900 |
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| 摘 要： | 以中国第Ⅱ号快中子脉冲反应堆(CFBR-Ⅱ)为试验平台,采用高功率稳定和多注量点拟合的试验方法测定了典型硅整流二极管的中子辐照实验损伤常数,验证了硅整流二极管的中子辐射损伤规律。试验结果表明:以正向压降为观测效应参数的硅整流二极管对于CFBR-Ⅱ堆泄漏中子能谱的试验损伤常数在3~4×10-15 V.cm2范围,硅整流二极管正向压降随中子注量的变化近似遵从指数增长规律。
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| 关 键 词： | 快中子脉冲反应堆 硅整流二极管 辐照效应 |
Experimental Study on Irradiation Effect of Silicon Commutation Diode on CFBR-II Neutron Field |
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| QIU Dong,ZOU De-hui. Experimental Study on Irradiation Effect of Silicon Commutation Diode on CFBR-II Neutron Field[J]. Nuclear Power Engineering, 2010, 31(1) |
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| Authors: | QIU Dong ZOU De-hui |
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| Abstract: | The neutron irradiation damage constants of typical silicon commutation diodes have been measured, and its irradiation damage rule of forward voltage v.s. neutron flux has been verified based on CFBR-II neutron filed. The experiment results indicate that the damage constants of silicon commutation diodes range from 3×10~(-15) V·cm~(-2)cm~2 to 4×10~(-15) V·cm~(-2), and the forward voltages grow exponentially with the neutron flux. |
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| Keywords: | Fast burst reactor Silicon commutation diode Irradiation effect |
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