化学气相沉积(CVD)碳化硅厚膜的实验研究

本研究通过CH₃SiCl₃/H₂体系,温度在1100℃—1500℃范围内,常压下,在石墨基底上CVD—SiC厚膜实验,观察了总流量、温度及CH₃SiCl₃浓度对沉积速率的影响。用扫描电镜及X射线衍射分析了沉积层的表面形貌及组织结构。结果发现当温度为1300℃、总流量为81/min、CH₃SiCl₃浓度为12mmol/min时沉积层为择优取向[111]的致密柱状β-SiC,且沉积速率最高,20分钟,沉积量可达10mg/cm²左右。

An Experimental Study of Chemical Vapour Deposition (CVD) of Silicon Carbide

Through the experiment of CVD-SiC thick film on graphite Substrate, with system of CH₃SiCl₃/H₂, temperature in range 1100℃—1500℃, under 1 atm pressure, it was observed that the total flow, temperature and the Concentration of CH₃SiCl₃ greatly influenced the coating rate.With SEM and X-Ray diffraction techniques, the morphology and microstructure of the coating were analysed.It comes into that the coating was thick column-shaped β-SiC, with the preferred ori-entation[111], and the coating rate got the maximum, when the processing temperature was 1300℃,the total flow 81/min, and concentration of CH₃SiCl₃ 12mmol/min.In the above condition the coating volume come up to 10.mg/cm² or so, within 20 minutes.