Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation |
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Authors: | Bernal Rodrigo A Agrawal Ravi Peng Bei Bertness Kristine A Sanford Norman A Davydov Albert V Espinosa Horacio D |
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Affiliation: | Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208-3111, USA. |
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Abstract: | We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic simulations were performed using density functional theory and molecular dynamics. Our work establishes that elasticity size dependence is limited to nanowires with diameters smaller than 20 nm. For larger diameters, the elastic modulus converges to the bulk values of 300 GPa for c-axis and 267 GPa for a- and m-axis. |
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