ALD淀积温度对HfO2高k栅介质材料特性的影响

采用原子层淀积方法,在不同生长温度下制备了HfO2高k栅介质薄膜,研究了生长温度对HfO2薄膜特性的影响.实验结果表明,HfO2薄膜的生长速率受生长温度的影响很大,在高温区将随着温度的上升而增大,而在低温区将随着温度的降低而增大.通过分析HfO2薄膜的C-V特性发现,不同生长温度下淀积的HfO2薄膜的介电常数和氧化层缺陷数量都有很大区别,过高和过低的生长温度都将增加HfO2薄膜中的原生缺陷,其中,280℃～310℃区间生长的HfO2薄膜中的缺陷最少.

Investigation of the influence of deposition temperature on ALD deposite HfO2 high k gate material

HfO2 high k dielectric films are deposited on Si(100) by the atomic layer deposition technique at different temperatures,and the influences of deposition temperature on the characteristic of HfO2 are investigated.Experimental results show that the deposition rate of HfO2 is seriously influenced by the deposition temperature,which will be rapidly increased with the increased deposition temperature in the high temperature region or the decreased temperature in the low temperature region.By analyzing the C-V characteristic of HfO2,it is found that both the dielectric constant and the quantity of oxide defects of HfO2deposited at different temperatures change greatly,and HfO2 deposited at the temperature of 280-310℃ has the least oxide defects.