Raman scattering analysis of SiH bond stretching modes in hydrogenated microcrystalline silicon for use in thin-film photovoltaics |
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Authors: | EV Johnson L Kroely P Roca i Cabarrocas |
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Affiliation: | aLPICM, CNRS, École Polytechnique, 91128 Palaiseau, France |
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Abstract: | The presence of a pair of peaks in the high wavenumber infrared (IR) absorption region of hydrogenated microcrystalline silicon (μc-Si:H) has been recently proposed as a strong indicator of poor quality material that is prone to oxidation and is therefore unsuitable for thin-film, photovoltaic applications. In this work, we show that these peaks located at 2083 and 2100 cm−1 are also present in the Raman scattering spectra of μc-Si:H and therefore can be directly measured on substrates that are suitable for solar cells. We present results for material grown by matrix-distributed electron-cyclotron resonance (MD-ECR) plasma-enhanced chemical vapour deposition (PECVD) on both crystalline silicon and borosilicate glass substrates. The narrow, twinned peaks detected by Raman disappear with time—presumably due to oxidation—although a broad peak at 2100 cm−1 remains. |
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Keywords: | Microcrystalline silicon Thin-film silicon Hydrogen Raman FTIR PECVD Microstructure |
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