Using a <670> zone axis for convergent beam electron diffraction measurements of lattice strain in strained silicon |
| |
Authors: | D.R. DIERCKS M.J. KAUFMAN R.B. IRWIN A. JAIN L. ROBERTSON J.W. WEIJTMANS R. WISE |
| |
Affiliation: | 1. Center for Advanced Research and Technology (CART), University of North Texas, Denton, TX, U.S.A.;2. Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO, U.S.A.;3. Texas Instruments, Dallas, TX, U.S.A. |
| |
Abstract: | Convergent beam electron diffraction patterns of silicon from the gate channel region of a complementary metal‐oxide‐semiconductor transistor with recessed Si.82Ge.18 stressors were analysed using three zone axes: <230>, <340> and <670>. Values measured using these axes were compared with each other with regards to strain along the [] and the [001] directions. It was demonstrated that strain measurements made using all three axes showed reasonable agreement with each other: an increase in the [] compressive strain and a switch from compressive to tensile strain in the [001] with decreasing distance below the gate. It was also observed that the strain calculations using the <230> axis had the lowest uncertainty whereas the <670> axis allowed for measurements closest to the gate due to the improved lateral resolution at that tilt angle. |
| |
Keywords: | CBED MOSFET strain measurement silicon |
|
|