| CLBO晶体化学机械抛光技术的研究 |
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| 引用本文： | 武晓玲,刘玉岭,贾英茜,鲍云英.CLBO晶体化学机械抛光技术的研究[J].微纳电子技术,2006,43(10):496-498. |
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| 作者姓名： | 武晓玲 刘玉岭 贾英茜 鲍云英 |
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| 作者单位： | 河北工业大学,微电子研究所,天津,300130 |
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| 摘 要： | 介绍了硼酸锂铯(CLBO)晶体的应用前景及在化学机械抛光过程中存在的问题,简要分析了晶体在常温下开裂的机理,选用无水溶剂对晶体进行化学机械抛光以防止加工过程中晶体的潮解开裂。分析了抛光液、压力、温度、pH值参数对抛光过程的影响,通过合适配比使速率可达1.5～2μm/min,且表面质量较好。
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| 关 键 词： | 硼酸锂铯 潮解 化学机械抛光 有机溶剂 |
| 文章编号： | 1671-4776(2006)10-0496-03 |
| 收稿时间： | 2006-06-13 |
| 修稿时间： | 2006年6月13日 |
Research on the CMP of CLBO |
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| WU Xiao-ling,LIU Yu-ling,JIA Ying-qian,BAO Yun-ying.Research on the CMP of CLBO[J].Micronanoelectronic Technology,2006,43(10):496-498. |
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| Authors: | WU Xiao-ling LIU Yu-ling JIA Ying-qian BAO Yun-ying |
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| Affiliation: | Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China |
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| Abstract: | The application foreground of CLBO and the problems of it in CMP process were introduced.The mechanisms of splitting at room temperature were analyzed.Anhydrous solvent was chosen for CMP to avoid crystal craze and deliquescence.The effect of polishing solution,pressure,temperature and pH on the polishing process were analyzed,By the agency of appropriate proportion,the speedis up to 1.5～2 μm/min,and high surface quality can be gained. |
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| Keywords: | CLBO deliquescence chemical mechanical polishing(CMP) organic solvent |
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