| 单层二硫化钨的荧光特性研究 |
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| 引用本文： | 刘东奇,惠王伟,鄢小卿,王槿. 单层二硫化钨的荧光特性研究[J]. 光电子．激光, 2021, 32(12): 1323-1328 |
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| 作者姓名： | 刘东奇 惠王伟 鄢小卿 王槿 |
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| 作者单位： | 南开大学物理科学学院,天津300071 |
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| 基金项目： | 2020高等学校教学研究项目(DJZW202010hb)、国家基础科学人才培养基金项目(J1210027)和南开大学物理基地能力提高项目(J1103208)资助项目 (南开大学 物理科学学院,天津 300071) |
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| 摘 要： | 单层二硫化钨的介电屏蔽效应弱,具有大的激子束缚能和强的荧光发射,是直接带隙半导体.利用自制荧光显微光谱成像实验装置对单层二硫化钨进行了荧光性能的测试和分析.结果 表明,单层二硫化钨的荧光发射峰处于620 nm附近.随着激光功率的增大,单层二硫化钨的荧光强度增大,其荧光发射峰发生明显的红移,且荧光峰位红移量和荧光强度受衬...
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| 关 键 词： | 过渡金属硫化物 二硫化钨 荧光性能 激子 |
| 收稿时间： | 2021-11-12 |
Photoluminescence properties of monolayer tungsten disulfide |
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| LIU Dongqi,HUI Wangwei,YAN Xiaoqing and WANG Jin. Photoluminescence properties of monolayer tungsten disulfide[J]. Journal of Optoelectronics·laser, 2021, 32(12): 1323-1328 |
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| Authors: | LIU Dongqi HUI Wangwei YAN Xiaoqing WANG Jin |
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| Affiliation: | School of Physics,Nankai University,Tianjin 300071,China,School of Physics,Nankai University,Tianjin 300071,China,School of Physics,Nankai University,Tianjin 300071,China and School of Physics,Nankai University,Tianjin 300071,China |
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| Abstract: | Monolayer tungsten disulfide is a direct bandgap semiconductor with weak dielectric screening effect,high exciton binding energy and strong photoluminescence emission.The photoluminescence properties of different monolayer tungsten disulfide samples were measured and analyzed by using a home-built photoluminescence microscopic spectral imaging setup.The results show that the photoluminescence emission peak of monolayer tungsten disulfide is around 620nm.With the increase of laser power,the photoluminescence intensiti es increase and the photoluminescence emission peaks of monolayer tungsten disulfide on different substrates exhibit a clear red shift effect.The substrat e types can affect the red shift magnitude and the photoluminescence intensities.From t he analysis of the excitonic behavior,the results reveal that the peak intensity r atio of the neutral excitons to the charged excitons is substrate dependent. |
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