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Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor
Authors:Ö  . Gü  llü  ,A. Tü    t
Affiliation:a Batman University, Science and Art Faculty, Department of Physics, 72060 Batman, Turkey
b Osmaniye Korkut Ata University, Science and Art Faculty, Department of Physics, 80000 Osmaniye, Turkey
c Atatürk University, Science Faculty, Department of Physics, 25240 Erzurum, Turkey
Abstract:The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ± 0.02 and 1.70 ± 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height Φb determined from the I-V measurements was 0.75 ± 0.01 eV at 300 K and decreases to 0.61 ± 0.01 eV at 200 K. The forward voltage-temperature (VF-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (IF) in the range 20 nA-6 μA. The VF-T characteristics were linear for three activation currents in the diode. From the VF-T characteristics at 20 nA, 100 nA and 6 μA, the values of the temperature coefficients of the forward bias voltage (dVF/dT) for the diode were determined as −2.30 mV K−1, −2.60 mV K−1 and −3.26 mV K−1 with a standard error of 0.05 mV K−1, respectively.
Keywords:Silicon   DNA   Metal-semiconductor structures   Barrier height   Ideality factor
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