Effects of Sn-doping on the electrical and thermal transport properties of p-type Cerium filled skutterudites |
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Authors: | Pengfei Qiu Xun Shi Xihong ChenXiangyang Huang Ruiheng Liu Lidong Chen |
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Affiliation: | a CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 DingXi Road, Shanghai 200050, China b Graduate University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract: | p-type Sn-doped CoSb3-based skutterudite compounds have been prepared using melting-quenching-annealing method and spark plasma sintering technique. Sn atoms in our samples are completely soluted on Sb-site with a fixed charge state and non-magnetic feature, providing a better choice to ascertain the effect of element doping at the Co4Sb12] framework on the electrical and thermal transport properties in p-type skutterudites. Doping Sn at the framework introduces additional ionized impurity scattering to affect the electron transport greatly. Similar electrical transport properties between Ce0.2Co4Sb11.2Sn0.8 and Co4Sb11Sn0.6Te0.4 suggest that Ce fillers contribute little to the valence band edge. Filling Ce into the voids and doping Sn at the framework introduce additional phonon resonant and point defect scattering mechanisms, thereby reducing lattice thermal conductivity remarkably. Moreover, our data suggest that combining these two effects is more effective to suppress lattice thermal conductivity through scattering broad range of phonons with different frequencies. |
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Keywords: | Thermoelectric Skutterudites Point defects Transport properties |
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