Accurate determination of temperature rise in Burrus-type LED's by using resonant reflection spectra

At the high injection operation of double-heterostructure (DH) light emitting diodes (LED's), such specific phenomena as temperature rise, band filling, carrier overflow, and ambipolar diffusion affect the device performance. We present an accurate method of mea, suring temperature rise in Burrus-type LED's by using resonant reflection spectra. This method is superior, especially for the high injection region, to the conventional emission-spectrum method and junction-voltage method due to its band filling-free and injection-free properties. An accuracy of ±0.8 K has been obtained, which is four times better than that of the emission-spectrum method in the case of Burrus-type LED's. This improvement is accomplished by using the resonant spectra in an absorption-free infrared spectral region. Thermal properties including dynamic behavior can be characterized quantitatively by deriving the thermal resistance and the thermal time constant of the device.