Si(100)表面的TCS研究(英文)

A TCS Study of Si(100) Surface

Total current spectroscopy (TCS) is a newly developed method in detecting electronic properties of solid surfaces. In this work, a chemically cleaned Si(100) wafer was cleaned and annealed "by heating the sample up to about 850℃ in a UHV chamber with a pressure less than 1×10-7pa then the surface appeared a sharp 2×1 LEED pattern.In the TCS spectra both on cleaned and uncleaned surfaces, four peaks labeled A, B, C aad D appeared in 3.5, 6.4, 9.3, and 13.5eV, respectively, with respect to vacuum level. Among them peaks A,C,D remain unchanged while peak B is quite sensitive to gas absorption and the surface temperature, mainly by changing its intensity. The phenomena are explained by assuming that inelastic scattering of incident eletrons dominates the process. Peaks A,C, D were caused by interband transitions and peak B was attributed to the surface state. Further studies are in consideration.