| 直流和脉冲电镀Cu互连线的性能比较 |
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| 引用本文： | 徐赛生,曾磊,张立锋,张卫,汪礼康.直流和脉冲电镀Cu互连线的性能比较[J].半导体技术,2008,33(12). |
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| 作者姓名： | 徐赛生 曾磊 张立锋 张卫 汪礼康 |
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| 作者单位： | 复旦大学,微电子学系,复旦-诺发互连研究中心,上海,200433;罗门哈斯电子材料(上海)有限公司,上海,201203 |
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| 基金项目： | 国家自然科学基金
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上海市科委AM基金
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| 摘 要： | 针对先进纳米Cu互连技术的要求,比较了直流和脉冲两种电镀条件下Cu互连线的性能以及电阻率、织构系数、晶粒大小和表面粗糙度的变化.实验结果表明,在相同电流密度条件下,脉冲电镀所得Cu镀层电阻率较低,表面粗糙度较小,表面晶粒尺寸和晶粒密度较大,而直流电镀所得镀层(111)晶面的择优程度优于脉冲.在超大规模集成电路Cu互连技术中,脉冲电镀将有良好的研究应用前景.
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| 关 键 词： | Cu互连 电沉积Cu层 脉冲电镀 直流电镀 |
Properties Comparison of Electrodeposited Copper Interconncet Line by DC and Pulse Plating |
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| Xu Saisheng,Zeng Lei,Zhang Lifeng,Zhang Wei,Wang Likang.Properties Comparison of Electrodeposited Copper Interconncet Line by DC and Pulse Plating[J].Semiconductor Technology,2008,33(12). |
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| Authors: | Xu Saisheng Zeng Lei Zhang Lifeng Zhang Wei Wang Likang |
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| Affiliation: | Xu Saisheng1,Zeng Lei2,Zhang Lifeng1,Zhang Wei1,Wang Likang1 (1.Fudan-Novellus Interconnect Research Center,School of Microelectronics,Fudan University,Shanghai 200433,China,2.ROHM&HAAS Electronic Materials(Shanghai)Limited Company,Shanghai 201203,China) |
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| Abstract: | Aiming at the technology demand of advanced copper interconnect,the properties of electrodeposited copper film and parameters such as resistivity,texture coefficient,grain size and surface roughness were investigated by DC plating and pulse plating respectively.The results show that at the same current density conditions,the Cu film deposited by pulse plating has lower resistivity,lower surface roughness,larger grain size and grain density,but the Cu film deposited by DC plating has better(111)preferential ... |
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| Keywords: | copper interconnect electrodeposited copper pulse plating DC plating |
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