锑掺杂纳米SnO2透明导电薄膜的制备与性能研究

采用溶胶-凝胶法在Si片、已镀SiO2的钠钙硅玻璃和普通钠钙硅玻璃上镀Sb掺杂摩尔分数为8%的SnO2薄膜(ATO),在450℃热处理温度下对薄膜结构,电学、光学性能进行表征。结果表明:薄膜以四方金红石结构存在,结晶完全;方阻值随镀膜层数的增加而明显降低,12层时薄膜最低方阻值为129Ω/□,可见光平均透过率在75%以上。随着波长的增大,红外波段的反射率逐渐增大,从15%增加到55%左右。

Preparation and properties of antimony-doped nanocrystalline tin oxide thin film

The 8% antimony-doped tin(ATO) thin films were deposited on silicon substrates,glass substrates with and without SiO2-coated by sol-gel process with annealing temperature of 450℃.The structural,electrical and optical properties of the thin films were studied in details.The X-ray diffraction(XRD) analysis revealed that the thin films retained the tetragonal rutile structure as undoped ones.The sheet resistivity decreased obviously with the increase of the thickness,which was around 129Ω/□ with 12 layers.The average transmittance in the visible range was above 75%,and the reflectance in the infrared range for ATO films on Si substrates increased from 15% to 55% with the increase of the wavelength.