GaAs Schottky-barrier-diode frequency multipliers in 300 and 450 GHz bands |
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| Authors: | Takada Tohru Yagasaki Tsuneo Hirayama Masahiro |
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| Affiliation: | NTT, Musashino Electrical Communication Laboratory, Musashino, Japan; |
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| Abstract: | A 450 GHz-band tripler delivering an output power of ?11.2 dBm has been developed. A high-efficiency 300 GHz doubler whose conversion loss is 10.7 dB has also been developed. These efficient multiplications have been obtained by the use of GaAs Schottky-barrier diodes and thin-film integrated-circuit techniques. |
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